N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 Infineon IPB010N06NATMA1
- RS Stock No.:
- 178-7445
- Mfr. Part No.:
- IPB010N06NATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 1000 units)**
$6,140.00
(exc. GST)
$6,750.00
(inc. GST)
Stock check temporarily unavailable - call for stock availability
FREE delivery for orders over $80.00 ex GST
Units | Per unit | Per Reel** |
|---|---|---|
| 1000 - 4000 | $6.14 | $6,140.00 |
| 5000 + | $5.526 | $5,526.00 |
**price indicative
- RS Stock No.:
- 178-7445
- Mfr. Part No.:
- IPB010N06NATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 180 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | D2PAK-7 | |
| Series | OptiMOS™ 5 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 1.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.31mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Width | 4.57mm | |
| Typical Gate Charge @ Vgs | 208 nC @ 10 V | |
| Height | 9.45mm | |
| Forward Diode Voltage | 4.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK-7 | ||
Series OptiMOS™ 5 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 1.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 10.31mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Width 4.57mm | ||
Typical Gate Charge @ Vgs 208 nC @ 10 V | ||
Height 9.45mm | ||
Forward Diode Voltage 4.2V | ||
Minimum Operating Temperature -55 °C | ||
Related links
- N-Channel MOSFET 60 V, 7-Pin D2PAK-7 Infineon IPB010N06NATMA1
- N-Channel MOSFET 60 V, 7-Pin D2PAK-7 Infineon IPB017N06N3GATMA1
- N-Channel MOSFET 100 V, 7-Pin D2PAK-7 Infineon IPB017N10N5LFATMA1
- N-Channel MOSFET 120 V, 7-Pin D2PAK-7 Infineon IPB036N12N3GATMA1
- N-Channel MOSFET 40 V, 7-Pin D2PAK-7 Infineon IPB180N04S4H0ATMA1
- N-Channel MOSFET 100 V, 7-Pin D2PAK-7 Infineon IPB025N10N3GATMA1
- N-Channel MOSFET 40 V, 7-Pin D2PAK-7 Infineon IPB011N04NGATMA1
- Silicon P-Channel MOSFET 40 V, 7-Pin D2PAK-7 Infineon IPB180P04P4L02ATMA2