N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220F onsemi FCPF165N65S3R0L

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Packaging Options:
RS Stock No.:
178-4510P
Mfr. Part No.:
FCPF165N65S3R0L
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

35 nC @ 10 V

Length

10.3mm

Number of Elements per Chip

1

Width

4.6mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

15.7mm

COO (Country of Origin):
CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

700 V @ TJ = 150 °C
Low Effective Output Capacitance (Typ. Coss(eff.) = 345 pF)
Ultra Low Gate Charge (Typ. Qg = 35 nC)
Optimized Capacitance
Typ. RDS(on) = 140 mΩ
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consumer
Industrial
End Products:
Notebook / Desktop computer / Game console
Telecom / Server
LCD / LED TV
LED Lighting / Ballast
Adapter

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