Infineon CoolMOS Type N-Channel MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220 IPP60R120C7XKSA1

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Subtotal (1 pack of 2 units)*

$13.09

(exc. GST)

$14.40

(inc. GST)

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  • 966 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8$6.545$13.09
10 - 98$6.42$12.84
100 - 248$6.30$12.60
250 - 498$6.18$12.36
500 +$6.07$12.14

*price indicative

Packaging Options:
RS Stock No.:
222-4702
Mfr. Part No.:
IPP60R120C7XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

92W

Typical Gate Charge Qg @ Vgs

34nC

Maximum Operating Temperature

150°C

Height

4.57mm

Standards/Approvals

No

Length

10.36mm

Width

15.95 mm

Automotive Standard

No

The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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