N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN onsemi NTMFS6H818NT1G
- RS Stock No.:
- 178-4431
- Mfr. Part No.:
- NTMFS6H818NT1G
- Brand:
- onsemi
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Price (ex. GST) Each (In a Pack of 5)
$5.752
(exc. GST)
$6.327
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 370 | $5.752 | $28.76 |
| 375 - 745 | $5.61 | $28.05 |
| 750 + | $5.52 | $27.60 |
*price indicative
Alternative
This product is not currently available. Here is our alternative recommendation.
- RS Stock No.:
- 178-4431
- Mfr. Part No.:
- NTMFS6H818NT1G
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.
Features
Small Footprint (5x6 mm)
Low RDS(on)
Low QG and Capacitance
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-
Bridges etc.)
48V systems
Battery Management and Protection
End Products
Motor Control
DC/DC converter
Load Switch
Battery Packs and ESS
Small Footprint (5x6 mm)
Low RDS(on)
Low QG and Capacitance
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-
Bridges etc.)
48V systems
Battery Management and Protection
End Products
Motor Control
DC/DC converter
Load Switch
Battery Packs and ESS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 123 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 5 |
| Maximum Drain Source Resistance | 3.7 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 3.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +175 °C |
| Length | 5.1mm |
| Width | 6.1mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 46 nC @ 10 V |
| Height | 1.05mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
Related links
- N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN onsemi NTMFS6H818NT1G
- N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN onsemi NVMFS6H818NT1G
- N-Channel MOSFET, 74 A, 80 V, 5-Pin DFN onsemi NTMFS6H836NT1G
- N-Channel MOSFET, 89 A, 80 V, 5-Pin DFN onsemi NVMFS6D1N08HT1G
- N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN onsemi NVMFS6H801NT1G
- N-Channel MOSFET, 103 A, 80 V, 5-Pin DFN onsemi NVMFS6H824NT1G
- N-Channel MOSFET, 203 A, 80 V, 5-Pin DFN onsemi NTMFS6H800NT1G
- N-Channel MOSFET, 203 A, 80 V, 5-Pin DFN onsemi NVMFS6H800NT1G