- RS Stock No.:
- 178-4231
- Mfr. Part No.:
- FDD86250-F085
- Brand:
- onsemi
6400 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (On a Reel of 2500)
$1.597
(exc. GST)
$1.757
(inc. GST)
Units | Per unit | Per Reel* |
---|---|---|
2500 - 2500 | $1.597 | $3,992.50 |
5000 - 7500 | $1.557 | $3,892.50 |
10000 + | $1.533 | $3,832.50 |
*price indicative
- RS Stock No.:
- 178-4231
- Mfr. Part No.:
- FDD86250-F085
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- PH
Product Details
ON Semiconductor MOSFET
The ON Semiconductor DPAK-3/TO252-3 surface mount N-channel MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has drain-source resistance of 22mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 160W. The MOSFET has a driving voltage of 10V. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Compact design
• Lead (Pb) free
• Low QG and capacitance
• Low QG and capacitance to minimize driver losses
• Low RDS (on) to minimize conduction losses
• Minimize conduction losses
• Minimize driver losses
• Operating temperature ranges between -55°C and 175°C
• Small footprint (5x6 mm)
• Lead (Pb) free
• Low QG and capacitance
• Low QG and capacitance to minimize driver losses
• Low RDS (on) to minimize conduction losses
• Minimize conduction losses
• Minimize driver losses
• Operating temperature ranges between -55°C and 175°C
• Small footprint (5x6 mm)
Applications
• Automotive engine control
• Distributed power architectures and VRM
• Integrated starter/alternator
• Power train management
• Primary switch for 12V systems
• Solenoid and motor drivers
• Distributed power architectures and VRM
• Integrated starter/alternator
• Power train management
• Primary switch for 12V systems
• Solenoid and motor drivers
Certifications
• AEC−Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• UIS certified
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• UIS certified
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 50 A |
Maximum Drain Source Voltage | 150 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 22 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 160 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 28 nC @ 10 V |
Maximum Operating Temperature | +175 °C |
Length | 6.73mm |
Width | 6.22mm |
Forward Diode Voltage | 1.25V |
Height | 2.39mm |
Minimum Operating Temperature | -55 °C |
Related links
- N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK onsemi FDD86250-F085
- N-Channel MOSFET, 8 A, 150 V, 3-Pin DPAK onsemi FDD86250
- N-Channel MOSFET, 32 A, 100 V, 3-Pin DPAK onsemi FDD3682-F085
- N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK onsemi HUFA76429D3ST-F085
- N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK Infineon IPD200N15N3GATMA1
- N-Channel MOSFET, 50 A, 136 A, 60 V, 3-Pin DPAK onsemi FDD86540
- N-Channel MOSFET, 14 A, 150 V, 3-Pin DPAK onsemi FDD120AN15A0
- N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK onsemi FDD2582