Infineon IPD200N15N3 G Type N-Channel MOSFET, 50 A, 150 V Enhancement, 5-Pin TO-252 IPD200N15N3GATMA1

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Subtotal (1 pack of 10 units)*

$25.38

(exc. GST)

$27.92

(inc. GST)

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  • 70 unit(s) ready to ship from another location
  • Plus 400 unit(s) shipping from 05 January 2026
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Per Pack*
10 - 620$2.538$25.38
630 - 1240$2.475$24.75
1250 +$2.436$24.36

*price indicative

Packaging Options:
RS Stock No.:
171-1945
Mfr. Part No.:
IPD200N15N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-252

Series

IPD200N15N3 G

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

23nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Height

4.57mm

Width

9.45 mm

Length

10.36mm

Standards/Approvals

No

Automotive Standard

No

The Infineon IPD200N15N3 G is 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part.

Excellent switching performance

Worlds lowest R DS(on)

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