N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

RS Stock No.:: 177-5342
Mfr. Part No.:: IXFN210N30P3
Brand:: IXYS

N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

This image is representative of the product range

270 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Tube of 10)

$65.009

(exc. GST)

$71.51

(inc. GST)

Units	Per unit	Per Tube*
10 - 10	$65.009	$650.09
20 - 30	$63.383	$633.83
40 +	$62.409	$624.09
*price indicative

RS Stock No.:: 177-5342
Mfr. Part No.:: IXFN210N30P3
Brand:: IXYS

Technical data sheets

IXFN210N30P3, Polar3 HiPerFET Power MOSFET, N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	192 A
Maximum Drain Source Voltage	300 V
Package Type	SOT-227
Series	HiperFET, Polar3
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	14.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.5 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	25.07mm
Typical Gate Charge @ Vgs	268 nC @ 10 V
Length	38.23mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	9.6mm