N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXYS IXFN80N60P3

RS Stock No.:: 804-7603
Mfr. Part No.:: IXFN80N60P3
Brand:: IXYS

N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXYS IXFN80N60P3

This image is representative of the product range

On back order for despatch 07/01/2025, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each

$48.34

(exc. GST)

$53.17

(inc. GST)

Units	Per unit
1 - 2	$48.34
3 - 4	$48.33
5 +	$48.20

RS Stock No.:: 804-7603
Mfr. Part No.:: IXFN80N60P3
Brand:: IXYS

Technical data sheets

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	66 A
Maximum Drain Source Voltage	600 V
Package Type	SOT-227B
Series	HiperFET, Polar3
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	960 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Length	38.23mm
Maximum Operating Temperature	+150 °C
Width	25.07mm
Transistor Material	Si
Typical Gate Charge @ Vgs	190 nC @ 10 V
Height	9.6mm
Minimum Operating Temperature	-55 °C