N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

RS Stock No.:: 920-0987
Mfr. Part No.:: IXFB210N30P3
Brand:: IXYS

N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

Available for back order.

Price (ex. GST) Each (In a Tube of 25)

$45.183

(exc. GST)

$49.701

(inc. GST)

Units	Per unit	Per Tube*
25 - 100	$45.183	$1,129.575
125 +	$40.664	$1,016.60

*price indicative

RS Stock No.:: 920-0987
Mfr. Part No.:: IXFB210N30P3
Brand:: IXYS

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: US

Product Details

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	210 A
Maximum Drain Source Voltage	300 V
Package Type	PLUS264
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	14.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.89 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	20.29mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	268 nC @ 10 V
Width	5.31mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	26.59mm