N-Channel MOSFET, 44 A, 650 V, 3-Pin TO-247 onsemi FCH067N65S3-F155
- RS Stock No.:
- 172-3423
- Mfr. Part No.:
- FCH067N65S3-F155
- Brand:
- onsemi
225 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Tube of 450)
$8.841
(exc. GST)
$9.725
(inc. GST)
Units | Per unit | Per Tube* |
|---|---|---|
| 450 - 450 | $8.841 | $3,978.45 |
| 900 - 1350 | $8.62 | $3,879.00 |
| 1800 + | $8.488 | $3,819.60 |
*price indicative
- RS Stock No.:
- 172-3423
- Mfr. Part No.:
- FCH067N65S3-F155
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.
700 V @ TJ = 150 oC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 62 mΩ
Wave soldering guarantee
Computing
Telecomunication
Industrial
Telecom / Server
Solar inverter / UPS
EVC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 62 mΩ
Wave soldering guarantee
Computing
Telecomunication
Industrial
Telecom / Server
Solar inverter / UPS
EVC
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 44 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247 |
| Series | FCH067N65S3 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 67 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 312 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 4.82mm |
| Typical Gate Charge @ Vgs | 78 nC @ 10 V |
| Length | 15.87mm |
| Height | 20.82mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
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