P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK Infineon IRFR5305TRLPBF

RS Stock No.:: 171-1909
Mfr. Part No.:: IRFR5305TRLPBF
Brand:: Infineon

P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK Infineon IRFR5305TRLPBF

2000 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 20)

$1.669

(exc. GST)

$1.836

(inc. GST)

Units	Per unit	Per Pack*
20 - 740	$1.669	$33.38
760 - 1480	$1.64	$32.80
1500 +	$1.609	$32.18
*price indicative

RS Stock No.:: 171-1909
Mfr. Part No.:: IRFR5305TRLPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Non Compliant

Product Details

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

The Infineon IRFR5305 is the 55V single P-channel HEXFET power MOSFET in a D-Pak package. The D-Pak is designed for surface mounting using vapour phase, infrared, or wave soldering techniques.

Advanced process technology
Fast switching
Fully avalanche rated
Lead free

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	55 V
Package Type	DPAK (TO-252)
Series	IRFR5305PBF
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	20 V
Number of Elements per Chip	1
Width	7.49mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	63 nC @ 10 V
Length	6.73mm
Typical Power Gain	0
Forward Diode Voltage	1.3V
Height	2.39mm
Minimum Operating Temperature	-55 °C