N-Channel MOSFET, 130 A, 75 V, 3-Pin TO-220AB Infineon IRF1407PBF
- RS Stock No.:
- 170-2243
- Mfr. Part No.:
- IRF1407PBF
- Brand:
- Infineon
5 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Tube of 50)
$3.085
(exc. GST)
$3.393
(inc. GST)
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | $3.085 | $154.25 |
| 250 - 450 | $2.992 | $149.60 |
| 500 + | $2.902 | $145.10 |
*price indicative
- RS Stock No.:
- 170-2243
- Mfr. Part No.:
- IRF1407PBF
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Benefits:
Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature
Target Applications:
Consumer Full-Bridge
Full-Bridge
Push-Pull
Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature
Target Applications:
Consumer Full-Bridge
Full-Bridge
Push-Pull
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 130 A |
| Maximum Drain Source Voltage | 75 V |
| Package Type | TO-220AB |
| Series | IRF1407PbF |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 7.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 330 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Length | 10.67mm |
| Number of Elements per Chip | 1 |
| Width | 4.83mm |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 160 nC @ 10 V |
| Forward Diode Voltage | 1.3V |
| Minimum Operating Temperature | -55 °C |
| Height | 16.51mm |
Related links
- N-Channel MOSFET, 130 A, 75 V, 3-Pin TO-220AB Infineon IRF1407PBF
- N-Channel MOSFET, 130 A, 40 V, 3-Pin TO-220AB Infineon IRL1004PBF
- N-Channel MOSFET, 130 A, 100 V, 3-Pin TO-220AB Infineon IRFB4310PBF
- N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB Infineon AUIRF2907Z
- N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB Infineon IRFB3607PBF
- Dual Silicon N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB Infineon...
- N-Channel MOSFET, 120 A, 75 V, 3-Pin TO-220AB Infineon IRFB3307ZPBF
- N-Channel MOSFET, 210 A, 75 V, 3-Pin TO-220AB Infineon IRFB3077PBF