Taiwan Semi N-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 TSM2310CX RFG

Brand

Taiwan Semiconductor

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

8.6 nC @ 10 V

Length

3.1mm

Width

1.7mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.2mm