N-Channel MOSFET, 39 A, 80 V, 3-Pin DPAK Infineon IRLR2908TRPBF

RS Stock No.:: 168-8750
Mfr. Part No.:: IRLR2908TRPBF
Brand:: Infineon

N-Channel MOSFET, 39 A, 80 V, 3-Pin DPAK Infineon IRLR2908TRPBF

This image is representative of the product range

On back order for despatch 09/07/2025, delivery within 10 working days from despatch date.

Price (ex. GST) Each (On a Reel of 2000)

$0.887

(exc. GST)

$0.976

(inc. GST)

Units	Per unit	Per Reel*
2000 - 8000	$0.887	$1,774.00
10000 +	$0.798	$1,596.00

*price indicative

RS Stock No.:: 168-8750
Mfr. Part No.:: IRLR2908TRPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MX

Product Details

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	39 A
Maximum Drain Source Voltage	80 V
Series	HEXFET
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	30 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	120 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Length	6.73mm
Typical Gate Charge @ Vgs	22 nC @ 4.5 V
Number of Elements per Chip	1
Width	6.22mm
Height	2.39mm
Minimum Operating Temperature	-55 °C