N-Channel MOSFET, 4.8 A, 550 V, 3-Pin SOT-223 Infineon IPN50R1K4CEATMA1
- RS Stock No.:
- 168-5922
- Mfr. Part No.:
- IPN50R1K4CEATMA1
- Brand:
- Infineon
3000 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (On a Reel of 3000)
$0.279
(exc. GST)
$0.307
(inc. GST)
Units | Per unit | Per Reel* |
---|---|---|
3000 - 12000 | $0.279 | $837.00 |
15000 + | $0.251 | $753.00 |
*price indicative
- RS Stock No.:
- 168-5922
- Mfr. Part No.:
- IPN50R1K4CEATMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Infineon CoolMOS™ CE Power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 4.8 A |
Maximum Drain Source Voltage | 550 V |
Series | CoolMOS™ CE |
Package Type | SOT-223 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 1.4 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 5 W |
Maximum Gate Source Voltage | -30 V, +30 V |
Width | 3.7mm |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Length | 6.7mm |
Typical Gate Charge @ Vgs | 8.2 nC @ 10 V |
Height | 1.7mm |
Forward Diode Voltage | 0.83V |
Minimum Operating Temperature | -40 °C |
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