Infineon CoolMOS CE Type N-Channel MOSFET, 4.8 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R1K4CEATMA1

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25 - 725$0.364$9.10
750 - 1475$0.355$8.88
1500 +$0.349$8.73

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Packaging Options:
RS Stock No.:
130-0911
Mfr. Part No.:
IPN50R1K4CEATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.8A

Maximum Drain Source Voltage Vds

550V

Series

CoolMOS CE

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.83V

Typical Gate Charge Qg @ Vgs

8.2nC

Maximum Power Dissipation Pd

5W

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.7 mm

Height

1.7mm

Length

6.7mm

Automotive Standard

No

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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