IXYS Type N-Channel MOSFET, 53 A, 800 V Enhancement, 4-Pin SOT-227 IXFN60N80P

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)*

$72.88

(exc. GST)

$80.17

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 51 unit(s) ready to ship from another location
  • Plus 387 unit(s) shipping from 08 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 2$72.88
3 - 4$72.17
5 +$70.84

*price indicative

RS Stock No.:
194-350
Distrelec Article No.:
302-53-376
Mfr. Part No.:
IXFN60N80P
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

53A

Maximum Drain Source Voltage Vds

800V

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

250nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.04kW

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

9.6mm

Width

25.42 mm

Length

38.23mm

Distrelec Product Id

30253376

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links