Dual N-Channel MOSFET, 22 A, 30 A, 30 V, 8-Pin PQFN8 onsemi FDMS7608S

RS Stock No.:: 166-3512
Mfr. Part No.:: FDMS7608S
Brand:: onsemi

Dual N-Channel MOSFET, 22 A, 30 A, 30 V, 8-Pin PQFN8 onsemi FDMS7608S

This image is representative of the product range

Available for back order.

Price (ex. GST) Each (On a Reel of 3000)

$0.829

(exc. GST)

$0.912

(inc. GST)

Units	Per unit	Per Reel*
3000 - 12000	$0.829	$2,487.00
15000 +	$0.746	$2,238.00

*price indicative

RS Stock No.:: 166-3512
Mfr. Part No.:: FDMS7608S
Brand:: onsemi

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: DE

Product Details

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	22 A, 30 A
Maximum Drain Source Voltage	30 V
Package Type	PQFN8
Series	PowerTrench
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	8.6 mΩ, 13.9 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	2.2 W, 2.5 W
Transistor Configuration	Series
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Width	6mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	18 nC @ 10 V, 21 nC @ 10 V
Length	5mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	0.725mm