ROHM HP8S36 Dual N-Channel MOSFET, 27 A, 80 A, 30 V, 8-Pin HSOP8 HP8S36TB

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Subtotal (1 pack of 10 units)*

$34.40

(exc. GST)

$37.80

(inc. GST)

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Last RS stock
  • Final 330 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
10 - 40$3.44$34.40
50 - 90$3.339$33.39
100 - 240$3.24$32.40
250 - 990$3.145$31.45
1000 +$3.051$30.51

*price indicative

RS Stock No.:
178-5992
Mfr. Part No.:
HP8S36TB
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

27 A, 80 A

Maximum Drain Source Voltage

30 V

Package Type

HSOP8

Series

HP8S36

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

22 W, 29 W

Maximum Gate Source Voltage

±128 V, ±20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Width

5.8mm

Typical Gate Charge @ Vgs

4.8 nC @ 4.5 V (N Channel), 47 nC @ 4.5 V (N Channel)

Number of Elements per Chip

2

Height

1.1mm

Minimum Operating Temperature

-55 °C

RoHS Status: Exempt

COO (Country of Origin):
TH
HP8S36 is low on-resistance MOSFET for switching application.

Low on - resistance
Pb-free lead plating
Halogen Free
Built in Schottky-barrier diode(Tr2)

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