N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB200N25N3GATMA1

RS Stock No.:: 165-8068
Mfr. Part No.:: IPB200N25N3GATMA1
Brand:: Infineon

N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB200N25N3GATMA1

This image is representative of the product range

4884 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 1000)

$6.818

(exc. GST)

$7.50

(inc. GST)

Units	Per unit	Per Reel*
1000 - 4000	$6.818	$6,818.00
5000 +	$6.136	$6,136.00

*price indicative

RS Stock No.:: 165-8068
Mfr. Part No.:: IPB200N25N3GATMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

RoHS Status: Exempt

COO (Country of Origin):: CN

Product Details

Infineon's 250V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.

Summary of Features

•Industry’s lowest R DS(on)

•Lowest Q g and Q gd

•World’s lowest FOM RoHS comliant − halogen free MSL 1 rated

Benefits

•Highest efficiency

•Highest Power density

•Lowest board space consumption

•Minimal device paralleling required

•System cost improvement

•Enviromentally friendly

•Easy-to-design-in products

Potential Applications

•Synchronous rectification for AC-DC SMPS

•Motor control for 48V–110V systems

•Isolated DC-DC converters

•Lighting for 110V AC networks

•HID lamps

•Class D audio amplifiers

•Uninterruptable power supplies (UPS)

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	64 A
Maximum Drain Source Voltage	250 V
Series	OptiMOS™ 3
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	20 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Length	10.31mm
Number of Elements per Chip	1
Width	9.45mm
Typical Gate Charge @ Vgs	64 nC @ 10 V
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	4.57mm