N-Channel MOSFET, 18 A, 200 V, 3-Pin I2PAK Vishay SIHF640L-GE3

RS Stock No.:: 165-6089
Mfr. Part No.:: SIHF640L-GE3
Brand:: Vishay

N-Channel MOSFET, 18 A, 200 V, 3-Pin I2PAK Vishay SIHF640L-GE3

This image is representative of the product range

On back order for despatch 06/11/2024, delivery within 10 working days from despatch date.

Price (ex. GST) Each (In a Tube of 50)

$2.009

(exc. GST)

$2.21

(inc. GST)

Units	Per unit	Per Tube*
50 - 50	$2.009	$100.45
100 - 450	$1.959	$97.95
500 +	$1.763	$88.15

*price indicative

RS Stock No.:: 165-6089
Mfr. Part No.:: SIHF640L-GE3
Brand:: Vishay

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	200 V
Package Type	I2PAK (TO-262)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	180 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	130 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.67mm
Typical Gate Charge @ Vgs	70 nC @ 10 V
Width	4.83mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	11.3mm