N-Channel MOSFET, 120 A, 40 V, 3-Pin H2PAK STMicroelectronics STH175N4F6-2AG
- RS Stock No.:
- 165-5563
- Mfr. Part No.:
- STH175N4F6-2AG
- Brand:
- STMicroelectronics
Subtotal (1 reel of 1000 units)**
$1,834.00
(exc. GST)
$2,017.00
(inc. GST)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80.00 ex GST
Units | Per unit | Per Reel** |
---|---|---|
1000 + | $1.834 | $1,834.00 |
**price indicative
- RS Stock No.:
- 165-5563
- Mfr. Part No.:
- STH175N4F6-2AG
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 120 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | H2PAK | |
Series | STripFET F6 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 2.4 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 150 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Width | 9.17mm | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Length | 10.4mm | |
Typical Gate Charge @ Vgs | 130 nC @ 10 V | |
Height | 4.8mm | |
Forward Diode Voltage | 1.3V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type H2PAK | ||
Series STripFET F6 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 9.17mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 130 nC @ 10 V | ||
Height 4.8mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
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