STMicroelectronics STripFET F6 N-Channel MOSFET, 120 A, 40 V, 3-Pin H2PAK STH175N4F6-2AG
- RS Stock No.:
- 876-5660
- Mfr. Part No.:
- STH175N4F6-2AG
- Brand:
- STMicroelectronics
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
$17.25
(exc. GST)
$19.00
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | $3.45 | $17.25 |
| 25 - 95 | $3.072 | $15.36 |
| 100 - 245 | $2.514 | $12.57 |
| 250 - 495 | $2.248 | $11.24 |
| 500 + | $2.106 | $10.53 |
*price indicative
- RS Stock No.:
- 876-5660
- Mfr. Part No.:
- STH175N4F6-2AG
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | H2PAK | |
| Series | STripFET F6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 9.17mm | |
| Typical Gate Charge @ Vgs | 130 nC @ 10 V | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
| Height | 4.8mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type H2PAK | ||
Series STripFET F6 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 9.17mm | ||
Typical Gate Charge @ Vgs 130 nC @ 10 V | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Height 4.8mm | ||
- COO (Country of Origin):
- CN
N-Channel STripFET™ F6, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics