Nexperia Type N-Channel MOSFET, 3.2 A, 12 V Enhancement, 4-Pin DFN PMXB40UNEZ

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Subtotal (1 pack of 25 units)*

$10.625

(exc. GST)

$11.70

(inc. GST)

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Units
Per unit
Per Pack*
25 - 1225$0.425$10.63
1250 - 2475$0.414$10.35
2500 +$0.408$10.20

*price indicative

Packaging Options:
RS Stock No.:
153-1958
Mfr. Part No.:
PMXB40UNEZ
Brand:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.2A

Maximum Drain Source Voltage Vds

12V

Package Type

DFN

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

121mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

66nC

Maximum Power Dissipation Pd

8.33W

Maximum Operating Temperature

150°C

Height

0.36mm

Length

1.15mm

Width

1.05 mm

Standards/Approvals

No

Automotive Standard

No

12 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection 1 kV

Very low Drain-Source on-state resistance RDSon = 34 mΩ

Very low threshold voltage of 0.65 V for portable applications

Low-side load switch and charging switch for portable devices

Power management in battery-driven portables

LED driver

DC-to-DC converters

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