P-Channel MOSFET, 2.9 A, 20 V, 4-Pin DFN1010D-3 Nexperia PMXB75UPEZ
- RS Stock No.:
- 153-0723
- Mfr. Part No.:
- PMXB75UPEZ
- Brand:
- Nexperia
10000 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (On a Reel of 5000)
$0.139
(exc. GST)
$0.153
(inc. GST)
| Units | Per unit | Per Reel* |
| 5000 - 5000 | $0.139 | $695.00 |
| 10000 - 15000 | $0.135 | $675.00 |
| 20000 + | $0.133 | $665.00 |
| *price indicative | ||
- RS Stock No.:
- 153-0723
- Mfr. Part No.:
- PMXB75UPEZ
- Brand:
- Nexperia
Technical data sheets
Legislation and Compliance
Product Details
20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance RDSon = 69 mΩ
Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
High-side load switch and charging switch for portable devices
Power management in battery driven portables
LED driver
DC-to-DC converter
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance RDSon = 69 mΩ
Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
High-side load switch and charging switch for portable devices
Power management in battery driven portables
LED driver
DC-to-DC converter
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 2.9 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | DFN1010D-3 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 950 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | -1V |
| Minimum Gate Threshold Voltage | -0.4V |
| Maximum Power Dissipation | 8330 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 8 V |
| Typical Gate Charge @ Vgs | 6.8 nC @ 10 V |
| Length | 1.15mm |
| Maximum Operating Temperature | +150 °C |
| Width | 1.05mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 0.36mm |
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