P-Channel MOSFET, 2.4 A, 30 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB120EPEZ
- RS Stock No.:
- 151-3073
- Mfr. Part No.:
- PMXB120EPEZ
- Brand:
- Nexperia
10000 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (On a Reel of 5000)
$0.175
(exc. GST)
$0.193
(inc. GST)
| Units | Per unit | Per Reel* |
| 5000 - 5000 | $0.175 | $875.00 |
| 10000 - 15000 | $0.174 | $870.00 |
| 20000 + | $0.171 | $855.00 |
| *price indicative | ||
- RS Stock No.:
- 151-3073
- Mfr. Part No.:
- PMXB120EPEZ
- Brand:
- Nexperia
Technical data sheets
Legislation and Compliance
Product Details
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
30 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV HBM
Drain-source on-state resistance RDSon = 350 mΩ
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV HBM
Drain-source on-state resistance RDSon = 350 mΩ
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 2.4 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | DFN1010D-3, SOT1215 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 187 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | -2.5V |
| Minimum Gate Threshold Voltage | -1V |
| Maximum Power Dissipation | 8.33 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Length | 1.15mm |
| Width | 1.05mm |
| Typical Gate Charge @ Vgs | 6.2 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 0.36mm |