IXYS Polar HiPerFET Type N-Channel MOSFET, 200 A, 100 V Enhancement, 4-Pin SOT-227 IXFN200N10P

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

$45.33

(exc. GST)

$49.86

(inc. GST)

Add to Basket
Select or type quantity
Orders below $60.00 (exc. GST) cost $12.95.
In Stock
  • 71 unit(s) ready to ship from another location
  • Plus 676 unit(s) shipping from 25 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 2$45.33
3 - 14$44.52
15 +$36.62

*price indicative

RS Stock No.:
125-8040
Mfr. Part No.:
IXFN200N10P
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

Polar HiPerFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

235nC

Maximum Power Dissipation Pd

680W

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Length

38.23mm

Width

25.07 mm

Height

9.6mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links