MPN

Wolfspeed C3M Type N-Channel MOSFET, 35 A, 1 kV Enhancement, 4-Pin TO-247 C3M0065100K

RS Stock No.:: 125-3453
Mfr. Part No.:: C3M0065100K
Brand:: Wolfspeed

Wolfspeed C3M Type N-Channel MOSFET, 35 A, 1 kV Enhancement, 4-Pin TO-247 C3M0065100K

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)*

$34.53

(exc. GST)

$37.98

(inc. GST)

FREE delivery for orders over $60.00 ex GST

Last RS stock

5 left, ready to ship from another location
Final 1,233 unit(s) shipping from 08 January 2026

Units	Per unit
1 - 7	$34.53
8 - 14	$33.85
15 +	$33.44

*price indicative

RS Stock No.:: 125-3453
Mfr. Part No.:: C3M0065100K
Brand:: Wolfspeed

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Wolfspeed
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	1kV
	Series	C3M
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	90mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	113.5W
	Maximum Gate Source Voltage Vgs	19 V
	Forward Voltage Vf	4.5V
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Operating Temperature	150°C
	Length	16.13mm
	Standards/Approvals	No
	Width	5.21 mm
	Height	23.6mm
	Automotive Standard	No

	Select all
	Brand Wolfspeed
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 1kV
	Series C3M
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 90mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 113.5W
	Maximum Gate Source Voltage Vgs 19 V
	Forward Voltage Vf 4.5V
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Operating Temperature 150°C
	Length 16.13mm
	Standards/Approvals No
	Width 5.21 mm
	Height 23.6mm
	Automotive Standard No

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

New C3M Silicon Carbide (SiC) MOSFET technology

Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range

New low-impedance package with driver source

8 mm of creepage/clearance between Drain and Source

High-speed switching with low output capacitance

High blocking voltage with low Drain-Source On-State Resistance

Avalanche ruggedness

Fast intrinsic diode with low Reverse Recovery

Wolfspeed C3M Type N-Channel MOSFET, 35 A, 1 kV Enhancement, 4-Pin TO-247 C3M0065100K

FREE delivery for orders over $60.00 ex GST

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

MOSFET Transistors, Cree Inc.

Related links