P-Channel MOSFET, 1.33 A, 500 V, 3-Pin DPAK onsemi FQD3P50TM
- RS Stock No.:
- 124-1413
- Mfr. Part No.:
- FQD3P50TM
- Brand:
- onsemi
Bulk discount available
Subtotal (1 reel of 2500 units)**
$2,392.50
(exc. GST)
$2,632.50
(inc. GST)
5000 In Global stock for delivery within 10 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80.00 ex GST
Units | Per unit | Per Reel** |
|---|---|---|
| 2500 - 2500 | $0.957 | $2,392.50 |
| 5000 - 7500 | $0.933 | $2,332.50 |
| 10000 + | $0.919 | $2,297.50 |
**price indicative
- RS Stock No.:
- 124-1413
- Mfr. Part No.:
- FQD3P50TM
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.33 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | QFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.9 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 50 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.33 A | ||
Maximum Drain Source Voltage 500 V | ||
Series QFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.9 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 50 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 6.22mm | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
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