STMicroelectronics STH285N10F8-6AG N channel-Channel Power MOSFET, 96 A, 60 V Enhancement Mode, 8-Pin PowerFLAT

N
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$1.06

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$1.17

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1 - 24$1.06
25 - 99$1.04
100 - 499$1.02
500 - 999$0.86
1000 +$0.81

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RS Stock No.:
800-463
Mfr. Part No.:
STL130N6LF7
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

96A

Maximum Drain Source Voltage Vds

60V

Series

STH285N10F8-6AG

Package Type

PowerFLAT

Mount Type

Through Hole

Pin Count

8

Maximum Drain Source Resistance Rds

4.8mΩ

Channel Mode

Enhancement Mode

Maximum Power Dissipation Pd

93W

Typical Gate Charge Qg @ Vgs

7.4nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Height

1mm

Width

5mm

Standards/Approvals

ECOPACK

Length

6mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.

Among the lowest RDS(on) on the market

Excellent FoM (figure of merit)

Low Crss/Ciss ratio for EMI immunity

High avalanche ruggedness

Logic level VGS(th)

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