STMicroelectronics STH285N10F8-6AG N channel-Channel Power MOSFET, 292 A, 100 V Enhancement Mode, 3-Pin H2PAK

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RS Stock No.:
800-460
Mfr. Part No.:
STH285N10F8-6AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

292A

Maximum Drain Source Voltage Vds

100V

Series

STH285N10F8-6AG

Package Type

H2PAK

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.9mΩ

Channel Mode

Enhancement Mode

Typical Gate Charge Qg @ Vgs

177nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

341W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

4V

Maximum Operating Temperature

175°C

Standards/Approvals

ECOPACK

Width

4.7mm

Height

15.8mm

Length

10.4mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.

AEC-Q101 qualified

175 °C maximum operating junction temperature

100% avalanche tested

Excellent FoM (figure of merit)

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