Infineon CoolSiC N channel-Channel Power MOSFET, 65 A, 400 V Enhancement, 4-Pin TO-247-4 IMZA40R025M2HXKSA1
- RS Stock No.:
- 762-904
- Mfr. Part No.:
- IMZA40R025M2HXKSA1
- Brand:
- Infineon
N
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- 240 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | $18.21 |
| 10 - 49 | $14.75 |
| 50 - 99 | $11.30 |
| 100 + | $9.03 |
*price indicative
- RS Stock No.:
- 762-904
- Mfr. Part No.:
- IMZA40R025M2HXKSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-247-4 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 25.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 195W | |
| Forward Voltage Vf | 4.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 5.1mm | |
| Length | 21.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-247-4 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 25.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 195W | ||
Forward Voltage Vf 4.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 5.1mm | ||
Length 21.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC MOSFET is Ideal for high frequency switching and synchronous rectific and features Benchmark gate threshold voltage. Additionally it features XT interconnection technology for best‑in‑class thermal performance.
100% avalanche tested
Recommended gate driving voltage
Qualified for industrial applications
Used for energy storage, UPS and battery formation
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