Infineon AIMBG75R N channel-Channel MOSFET, 64 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R007M2HXTMA1
- RS Stock No.:
- 762-866
- Mfr. Part No.:
- AIMBG75R007M2HXTMA1
- Brand:
- Infineon
N
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$185.38
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$203.92
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Units | Per unit |
|---|---|
| 1 - 4 | $185.38 |
| 5 - 9 | $168.71 |
| 10 + | $150.17 |
*price indicative
- RS Stock No.:
- 762-866
- Mfr. Part No.:
- AIMBG75R007M2HXTMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | PG-TO263-7 | |
| Series | AIMBG75R | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Maximum Power Dissipation Pd | 234W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type PG-TO263-7 | ||
Series AIMBG75R | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Maximum Power Dissipation Pd 234W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Infineon MOSFET is a high-performance power device designed for automotive applications, delivering efficient switching capabilities and robust reliability across demanding environments.
Operates at a maximum drain-source voltage of 750V with exceptional thermal management
Features best-in-class RDS(on) for improved power efficiency
Ensures enhanced robustness for bus voltages exceeding 500V
Allows for higher switching frequencies in soft switching topologies
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