Vishay TrenchFET N channel-Channel MOSFET, 155 A, 100 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ118E-T1_GE3
- RS Stock No.:
- 735-271
- Mfr. Part No.:
- SQJQ118E-T1_GE3
- Brand:
- Vishay
N
Bulk discount available
Subtotal (1 unit)*
$5.94
(exc. GST)
$6.53
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 04 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | $5.94 |
| 10 - 24 | $3.86 |
| 25 - 99 | $2.04 |
| 100 - 499 | $1.97 |
| 500 + | $1.92 |
*price indicative
- RS Stock No.:
- 735-271
- Mfr. Part No.:
- SQJQ118E-T1_GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 155A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | TrenchFET | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0098Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 122nC | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.9mm | |
| Length | 8mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 7.9 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 155A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series TrenchFET | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0098Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 122nC | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Operating Temperature 175°C | ||
Height 1.9mm | ||
Length 8mm | ||
Standards/Approvals RoHS Compliant | ||
Width 7.9 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Related links
- Vishay TrenchFET N channel-Channel MOSFET 60 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH602E-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK (8x8L)
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L)
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ140E-T1_GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ186E-T1_GE3
- Vishay TrenchFET Gen IV Type P-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L)
- Vishay TrenchFET P-Channel MOSFET -80 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ181EL-T1_GE3
- Vishay TrenchFET P-Channel MOSFET -60 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ161EL-T1_GE3