Vishay SiD N channel-Channel MOSFET, 291 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SiDR402EP

N
View all MOSFETs
Bulk discount available
View bulk pricing options

Subtotal (1 unit)*

$5.94

(exc. GST)

$6.53

(inc. GST)

Add to Basket
Select or type quantity

Temporarily out of stock
  • Shipping from 21 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
RS Stock No.:
735-145
Mfr. Part No.:
SiDR402EP
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

291A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAK SO-8

Series

SiD

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00088Ω

Channel Mode

Enhancement

Forward Voltage Vf

40V

Maximum Gate Source Voltage Vgs

10V

Maximum Power Dissipation Pd

150W

Typical Gate Charge Qg @ Vgs

110nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

6mm

Length

7mm

Standards/Approvals

RoHS

Height

2mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N-Channel MOSFET rated for 40V drain-source voltage, engineered for high-efficiency synchronous rectification in AI power server DC/DC converters. It provides ultra-low on-resistance around 0.88mΩ at 10V gate drive to minimize conduction losses in high-current power stages.

65A continuous drain current at TA=25°C

Low RDS(on) x Qg figure-of-merit for optimal switching

Material categorization qualification for reliability

Related links