Vishay SiD N channel-Channel MOSFET, 227 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SiDR626EP

N

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RS Stock No.:
735-139
Mfr. Part No.:
SiDR626EP
Brand:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

227A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK SO-8

Series

SiD

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00174Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

68nC

Forward Voltage Vf

60V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Width

6mm

Height

2mm

Length

7mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency synchronous rectification in AI power server solutions. It delivers very low on-resistance of 1.7mΩ maximum at 10V gate drive to minimize conduction losses in high-current DC/DC converter applications.

50.8A at TA=25°C and 227A at TC=25°C current ratings

Tuned for lowest RDS(on) x Qoss figure-of-merit

100% Rg and UIS tested for reliability

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