Vishay SiD N channel-Channel MOSFET, 153 A, 80 V Enhancement, 8-Pin PowerPAK SO-8 SiDR5802EP

N
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RS Stock No.:
735-134
Mfr. Part No.:
SiDR5802EP
Brand:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

153A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK SO-8

Series

SiD

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0029Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

37.3nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

150W

Forward Voltage Vf

80V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

6mm

Standards/Approvals

RoHS

Height

2mm

Length

7mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N-Channel MOSFET rated at 80V drain-source voltage for high-efficiency power conversion in AI server and data center applications. It features ultra-low on-resistance of 2.9mΩ maximum at 10V gate drive to reduce conduction losses in synchronous buck topologies.

153A continuous drain current at TC=25°C

28nC typical total gate charge for fast switching

-55°C to +175°C extended temperature range

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