Vishay SiS N channel-Channel MOSFET, 64 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSD5806DN

N
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$3.39

(exc. GST)

$3.73

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Units
Per unit
1 - 9$3.39
10 - 24$2.20
25 - 99$1.16
100 - 499$1.11
500 +$1.09

*price indicative

RS Stock No.:
735-136
Mfr. Part No.:
SiSD5806DN
Brand:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK 1212

Series

SiS

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0069Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

57W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

22nC

Forward Voltage Vf

80V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Length

4mm

Height

1mm

Width

4mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N-Channel MOSFET rated for 80V drain-source voltage, specifically engineered for low-loss operation in AI power server solutions and high-efficiency DC/DC converters.

64A continuous drain current at TC=25°C

57W maximum power dissipation

33nC maximum total gate charge

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