Infineon IMW65 Type N-Channel MOSFET, 32.8 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R060M2HXKSA1

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RS Stock No.:
351-867
Mfr. Part No.:
IMW65R060M2HXKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

32.8A

Output Power

130W

Maximum Drain Source Voltage Vds

650V

Package Type

PG-TO-247

Series

IMW65

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC

Height

5.3mm

Length

16.3mm

Width

21.5 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon CoolSiC MOSFET 650 V, 60 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Excellent figures of merit (FOMs)

Best in class RDS(on)

High robustness and overall quality

Flexible driving voltage range

Support for unipolar driving (VGSoff=0)

Best immunity against turn-on effects

Improved package interconnect with .XT

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