Infineon ISC Type N-Channel MOSFET, 164 A, 100 V Enhancement, 8-Pin PG-TDSON-8 ISC035N10NM5LF2ATMA1

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$17.29

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$19.02

(inc. GST)

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Per unit
Per Pack*
2 - 18$8.645$17.29
20 - 198$7.785$15.57
200 - 998$7.17$14.34
1000 - 1998$6.655$13.31
2000 +$5.96$11.92

*price indicative

RS Stock No.:
349-141
Mfr. Part No.:
ISC035N10NM5LF2ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

164A

Maximum Drain Source Voltage Vds

100V

Series

ISC

Package Type

PG-TDSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

217W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC61249-2-21, JEDEC

COO (Country of Origin):
CN
The Infineon OptiMOS 5 Linear FET 2, 100 V is an N-channel, normal level MOSFET specifically designed for hot-swap, battery protection, and e-fuse applications. It features very low on resistance (RDS(on)), which helps minimize conduction losses, enhancing efficiency. The MOSFET also offers a wide safe operating area (SOA), ensuring reliable performance under a variety of operating conditions. These features make it an ideal choice for applications requiring robust, efficient, and reliable power management.

100% avalanche tested

Pb‑free lead plating and RoHS compliant

Halogen‑free according to IEC61249‑2‑21

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