Infineon FS13MR12W2M1H_C55 Type N-Channel MOSFET, 50 A, 1200 V Enhancement EasyPACK FS13MR12W2M1HPB11BPSA1
- RS Stock No.:
- 348-980
- Mfr. Part No.:
- FS13MR12W2M1HPB11BPSA1
- Brand:
- Infineon
Subtotal (1 unit)*
$848.07
(exc. GST)
$932.88
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- Plus 18 unit(s) shipping from 29 December 2025
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Units | Per unit |
|---|---|
| 1 + | $848.07 |
*price indicative
- RS Stock No.:
- 348-980
- Mfr. Part No.:
- FS13MR12W2M1HPB11BPSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | EasyPACK | |
| Series | FS13MR12W2M1H_C55 | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Forward Voltage Vf | 5.35V | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747, IEC 60749, IEC 60068 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type EasyPACK | ||
Series FS13MR12W2M1H_C55 | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Forward Voltage Vf 5.35V | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747, IEC 60749, IEC 60068 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyPACK 2B CoolSiC MOSFET Six-Pack Module incorporates CoolSiC MOSFET Enhanced Generation 1 technology, delivering exceptional performance for power applications. It comes in a best-in-class package with a compact 12 mm height, ensuring efficient space utilization while maintaining high performance. The module utilizes leading-edge Wide Bandgap (WBG) materials, offering superior efficiency and thermal management.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
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