Infineon ISA Type P, Type N-Channel MOSFET, 8.4 A, 30 V Enhancement, 3-Pin PG-TO252-3 ISA220280C03LMDSXTMA1

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$18.32

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$20.16

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20 - 180$0.916$18.32
200 - 480$0.871$17.42
500 - 980$0.806$16.12
1000 - 1980$0.743$14.86
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RS Stock No.:
348-904
Mfr. Part No.:
ISA220280C03LMDSXTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

30V

Package Type

PG-TO252-3

Series

ISA

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Standards/Approvals

IEC61249‐2‐21, JEDEC

Length

6.2mm

Width

5 mm

Height

1.75mm

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon OptiMOS 3 Power Transistors available in complementary N and P channel configurations, are designed for high efficiency switching applications. These MOSFETs feature very low on resistance (RDS(on)), which minimizes conduction losses and enhances overall system performance. Additionally, they offer superior thermal resistance, ensuring better heat dissipation and reliability in demanding applications. These characteristics make them ideal for various power management and energy efficient designs.

100% avalanche tested

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249‑2‑21

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