Infineon OptiMOS Type P-Channel MOSFET, -16.4 A, 60 V Enhancement, 3-Pin PG-TO252-3

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$11.76

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$12.94

(inc. GST)

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Units
Per unit
Per Pack*
10 - 40$1.176$11.76
50 - 90$0.996$9.96
100 - 240$0.922$9.22
250 - 990$0.905$9.05
1000 +$0.887$8.87

*price indicative

RS Stock No.:
273-3012
Mfr. Part No.:
IPD900P06NMATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-16.4A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

PG-TO252-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

63W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

-27nC

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1: 55/175/56, RoHS, IEC61249-2-21

Automotive Standard

No

The Infineon P-channel MOSFETs in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in mediu

Easy interface to MCU

Fast switching

Avalanche ruggedness

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