N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227 IXYS IXFN82N60P

RS Stock No.:: 194-130
Mfr. Part No.:: IXFN82N60P
Brand:: IXYS

N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227 IXYS IXFN82N60P

This image is representative of the product range

On back order for despatch 11/11/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each

$61.39

(exc. GST)

$67.53

(inc. GST)

Units	Per unit
1 - 2	$61.39
3 - 4	$60.20
5 +	$58.96

RS Stock No.:: 194-130
Mfr. Part No.:: IXFN82N60P
Brand:: IXYS

Technical data sheets

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	72 A
Maximum Drain Source Voltage	600 V
Series	HiperFET, Polar
Package Type	SOT-227B
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	75 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.04 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	38.2mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	240 nC @ 10 V
Width	25.07mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Height	9.6mm
Minimum Operating Temperature	-55 °C