STMicroelectronics SuperMESH Type N-Channel MOSFET, 300 mA, 600 V Enhancement, 4-Pin SOT-223 STN1NK60Z

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$12.02

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$13.22

(inc. GST)

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20 - 180$0.601$12.02
200 - 480$0.571$11.42
500 - 980$0.53$10.60
1000 - 1980$0.486$9.72
2000 +$0.468$9.36

*price indicative

Packaging Options:
RS Stock No.:
151-928
Distrelec Article No.:
304-37-475
Mfr. Part No.:
STN1NK60Z
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

300mA

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-223

Series

SuperMESH

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

15Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.9nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

3.7 mm

Length

6.7mm

Height

1.8mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established strip based Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

SD improved capability

Zener protected

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