IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 791-7416
- Mfr. Part No.:
- IXGH48N60B3
- Brand:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
$41.48
(exc. GST)
$45.62
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- Plus 20 unit(s) shipping from 12 January 2026
- Plus 2 unit(s) shipping from 19 January 2026
- Plus 30 unit(s) shipping from 25 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 14 | $20.74 | $41.48 |
| 16 - 28 | $20.225 | $40.45 |
| 30 + | $19.94 | $39.88 |
*price indicative
- RS Stock No.:
- 791-7416
- Mfr. Part No.:
- IXGH48N60B3
- Brand:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 280 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 300 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 40kHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.26 x 5.3 x 21.46mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 280 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 300 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 40kHz | ||
Transistor Configuration Single | ||
Dimensions 16.26 x 5.3 x 21.46mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
IGBT Discretes, IXYS
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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