- RS Stock No.:
- 125-8050
- Mfr. Part No.:
- IXXK100N60C3H1
- Brand:
- IXYS
48 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each
$40.12
(exc. GST)
$44.13
(inc. GST)
Units | Per unit |
1 + | $40.12 |
- RS Stock No.:
- 125-8050
- Mfr. Part No.:
- IXXK100N60C3H1
- Brand:
- IXYS
Legislation and Compliance
- COO (Country of Origin):
- PH
Product Details
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 100 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 695 W |
Number of Transistors | 1 |
Package Type | TO-264 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 20 → 60kHz |
Transistor Configuration | Single |
Dimensions | 20.3 x 5.3 x 26.6mm |
Maximum Operating Temperature | +150 °C |
Energy Rating | 600mJ |
Minimum Operating Temperature | -55 °C |