Infineon IGW75N60TFKSA1, Type N-Channel Power Semiconductor, 75 A 600 V, 3-Pin TO-247, Through Hole

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Packaging Options:
RS Stock No.:
754-5395
Mfr. Part No.:
IGW75N60TFKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

Power Semiconductor

Maximum Continuous Collector Current Ic

75A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

428W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC J-STD-020 and JESD-022, RoHS

Series

TrenchStop

Automotive Standard

No

Infineon TrenchStop IGBT Transistors, 600 and 650V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V

• Very low VCEsat

• Low turn-off losses

• Short tail current

• Low EMI

• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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