Infineon IGP50N60TXKSA1 IGBT Transistor Module, 90 A 600 V PG-TO220-3
- RS Stock No.:
- 259-1525
- Mfr. Part No.:
- IGP50N60TXKSA1
- Brand:
- Infineon
466 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 2)
$6.605
(exc. GST)
$7.265
(inc. GST)
Units | Per unit | Per Pack* |
---|---|---|
2 - 8 | $6.605 | $13.21 |
10 - 18 | $6.045 | $12.09 |
20 - 24 | $5.925 | $11.85 |
26 - 98 | $5.78 | $11.56 |
100 + | $5.15 | $10.30 |
*price indicative
- RS Stock No.:
- 259-1525
- Mfr. Part No.:
- IGP50N60TXKSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon low loss IGBT has easy parallel switching capability due to positive temperature coefficient in Vcesat. It is high ruggedness, temperature stable behaviour. It is very soft, fast recovery anti-parallel emitter controlled diode.
Maximum junction temperature 175°C
Short circuit withstand time 5 micro second
Low EMI
Low gate charge
Very tight parameter distribution
Short circuit withstand time 5 micro second
Low EMI
Low gate charge
Very tight parameter distribution
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 90 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 333 W |
Number of Transistors | 3 |
Package Type | PG-TO220-3 |
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