Infineon IGBT, 15 A 600 V TO-220
- RS Stock No.:
- 258-0994
- Mfr. Part No.:
- IKA15N60TXKSA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
$102.90
(exc. GST)
$113.20
(inc. GST)
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | $2.058 | $102.90 |
| 100 - 100 | $1.852 | $92.60 |
| 150 + | $1.667 | $83.35 |
*price indicative
- RS Stock No.:
- 258-0994
- Mfr. Part No.:
- IKA15N60TXKSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 15A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 35.7W | |
| Package Type | TO-220 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | TRENCHSTOPTM | |
| Standards/Approvals | JEDEC1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 15A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 35.7W | ||
Package Type TO-220 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Series TRENCHSTOPTM | ||
Standards/Approvals JEDEC1 | ||
Automotive Standard No | ||
The Infineon hard-switching 600 V, 15 A TRENCHSTOP IGBT3 discrete co-packed with full-rated external free-wheeling diode in a TO-220 Full-Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to the combination of trench-cell and field stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Very soft, fast recovery anti-parallel Emitter Controlled diode
High ruggedness, temperature stable behaviour
Low EMI emissions
Low gate charge
Very tight parameter distribution
Related links
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